Accurate and realistic corner characterization of

专利名称：Accurate and realistic corner

characterization of standard cells

发明人：Dinesh Maheshwari申请号：US09972131申请日：20011005公开号：US06665847B1公开日：20031216

专利附图：

摘要：A memory resident circuit cell model for characterizing an integrated circuitcell. The present invention comprises a first aggregate value representing a best casecorner and a second aggregate value representing a worst case corner. In the present

embodiment, the first and second aggregate value comprise a first delay representationaccounting for timing variations of the cell relative to cross-coupling within the cell and asecond delay representation accounting for timing variations of the cell relative to over-the-cell-routing-coupling. The first and second aggregate value further comprise a thirddelay representation accounting for timing variations of the cell for pin-input-capacitanceand a fourth delay representation accounting for timing variations of the cell relative todelays due to near simultaneous input switching. The first and second aggregate valuefurther comprise a fifth delay representation accounting for timing variations of the cellrelative to interdependent set up, hold, delay variations for sequential cells.

申请人：CYPRESS SEMICONDUCTOR CORPORATION

代理机构：Wagner, Murabito & Hao LLP

更多信息请下载全文后查看