专利名称：FABRICATION OF A VERTICAL FIELD EFFECT
TRANSISTOR DEVICE WITH A MODIFIEDVERTICAL FIN GEOMETRY
发明人：Brent A. Anderson,Edward J. Nowak申请号：US16366623申请日：20190327
公开号：US20190221668A1公开日：20190718
专利附图：
摘要：A vertical transport fin field effect transistor (VTFET) with a smaller cross-sectional area at the top of the fin than at the bottom, including, a substrate, a vertical fin
on the substrate, wherein the vertical fin has a cross-sectional area at the base of thevertical fin that is larger than a cross-sectional area at the top of the vertical fin, whereinthe cross-sectional area at the top of the vertical fin is in the range of about 10% toabout 75% of the cross-sectional area at the base of the vertical fin, and a central gatedregion between the base and the top of the vertical fin.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
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