Semiconductor device having an insulated gate tran

专利名称：Semiconductor device having an insulated

gate transistor

发明人：Hiroshi Yuzurihara,Mamoru Miyawaki,Akira

Ishizaki,Genzo Momma,Tetsunobu Kochi

申请号：US08/158371申请日：19931129公开号：US05428237A公开日：19950627

摘要：An insulated gate type transistor includes a plurality of major electroderegions, a channel region provided between the plurality of major electrode regions, agate electrode provided on the channel region with a gate insulating film therebetween,and a semiconductor region provided in contact with the channel region, the

semiconductor region having the same conductivity type as that of the channel regionand a higher impurity concentration than the channel region. The gate electrode has atleast two opposing portions. The plurality of major electrode regions are provided on ansubstrate insulating film. The transistor is activated in a state where the semiconductorregion is maintained at a predetermined voltage. A semiconductor device includes aplurality of memory cells, each of which includes the aforementioned insulated gate typetransistor and an electrically breakable memory element provided on one of the majorelectrode regions.

申请人：CANON KABUSHIKI KAISHA

代理机构：Fitzpatrick, Cella, Harper & Scinto

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