AO3418

Rev 3: Nov 2004AO3418, AO3418L ( Green Product )N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.FeaturesVDS (V) = 30VID = 3.8 ARDS(ON) < 60mΩ (VGS = 10V)RDS(ON) < 70mΩ (VGS = 4.5V)RDS(ON) < 155mΩ (VGS = 2.5V)TO-236(SOT-23)Top ViewGDSG D S Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain Current APulsed Drain Current BTA=25°CPower Dissipation AMaximum30±123.83.1151.40.9-55 to 150UnitsVVATA=25°CTA=70°CIDIDMPDTJ, TSTGTA=70°CW°CJunction and Storage Temperature RangeThermal CharacteristicsParameter

Maximum Junction-to-Ambient AMaximum Junction-to-Ambient AMaximum Junction-to-Lead C

Symbol

t ≤ 10sSteady-StateSteady-State

RθJARθJLTyp7010063Max9012580Units°C/W°C/W°C/W

Alpha & Omega Semiconductor, Ltd.

AO3418, AO3418L

Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol

Parameter

ConditionsID=250µA, VGS=0V VDS=24V, VGS=0V

TJ=55°C

VDS=0V, VGS=±12VVDS=VGS ID=250µAVGS=4.5V, VDS=5VVGS=10V, ID=3.8A

RDS(ON)

Static Drain-Source On-Resistance

TJ=125°C

VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A

Forward TransconductanceVDS=5V, ID=3.8ADiode Forward VoltageIS=1A,VGS=0VMaximum Body-Diode Continuous Current

115

43645210111.70.81

60857015512.5270

1.4

Min30

0.001

151001.8

Typ

Max

UnitsVµAnAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnC

STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)

Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current

gFSVSDIS

DYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssReverse Transfer CapacitanceRgGate resistanceSWITCHING PARAMETERSQgTotal Gate ChargeQgsGate Source ChargeQgdGate Drain ChargetD(on)Turn-On DelayTimetrTurn-On Rise TimetD(off)Turn-Off DelayTimetfTurn-Off Fall TimetrrBody Diode Reverse Recovery TimeQrrBody Diode Reverse Recovery Charge

VGS=0V, VDS=15V, f=1MHzVGS=0V, VDS=0V, f=1MHz

226

39291.431.40.552.63.214.52.110.23.8

1.73.6

VGS=4.5V, VDS=15V, ID=3.8A

VGS=10V, VDS=15V, RL=3.9Ω, RGEN=6Ω

IF=3.8A, dI/dt=100A/µsIF=3.8A, dI/dt=100A/µs

45223135

2

A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3418, AO3418L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1510V3.5V126V4V3V9)A( DI6VGS=2.5V30012345VDS (Volts)Fig 1: On-Region Characteristics200175150VGS=2.5V)Ωm125( )N100O(DSR75VGS=4.5V5025VGS=10V00246810ID (A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage100ID=3.8A9080)125°CΩm70( )NO(60DSR25°C5040300246810VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.

108VDS=5V6)A(DI4125°C225°C000.511.522.533.5VGS(Volts)Figure 2: Transfer Characteristics1.8270VGS=4.5VecnID=3.5Aa1.6t1.7siseR1.4-3.6VIGS=10VnD=3.8AO dez1.2ilaVGS=2.5Vmr1ID=1ANo0.8025507510012515013175Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1.0E+011.0E+001.0E-01)A125°C( 1.0E-02IS25°C1.0E-031.0E-041.0E-050.00.20.40.60.81.01.2VSD (Volts)Figure 6: Body-Diode CharacteristicsAO3418, AO3418L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS5400VDS=15VID=3.8ACapacitance (pF)350300Ciss250200150100500034Qg (nC)Figure 7: Gate-Charge CharacteristicsTJ(Max)=150°CTA=25°C12500152025VDS (Volts)Figure 8: Capacitance Characteristics51030CossCrss4VGS (Volts)321100.027020TJ(Max)=150°CTA=25°C1.73.610.0ID (Amps)1ms0.1s10msPower (W)RDS(ON) limited10µs100µs15101.01s10sDC0.10.1110100VDS (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)500.001130.010.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=90°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PDTonSingle PulseT0.010.000010.00010.1110Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance0.0010.011001000Alpha & Omega Semiconductor, Ltd.